BAND-GAP, THICKNESS AND DOPING CONSIDERATION FOR CIGS/ZNS/ZNO CELL USING SCAPS-1D
Satyendra Kumar, Swati Arora
Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, India
Abstract– Solar energy is rendered useful among renewable energy in India. The government has launched a National Solar Mission to meet future demands for electricity. The favorable condition in throughout the country provides enormous scope for research and development. This work is aimed to fine-tune design parameters like band-gap, doping concentration and thickness of CIGS absorber to enhance the energy conversion per unit cell. For this a laboratory reference model was considered. A precise and correlated simulation model is designed using SCAPS-1D. Effects of optimization of its parameters are studied where band gap of CIGS is varied in the range 1.040eV to 1.411eV, doping consideration from 1015 (/cm3) to 1017 (/cm3) and thickness of CIGS layer from 0.5µm to 2µm. Number of iterations of simulations are performed to precise the open circuited voltage and short-circuited current density. Another objective of this work was to replace toxic Cd by a suitable compound. A well extracted ZnS of are incorporated with different compositions to propose an optimized CIGD/ZnS/ZnO structured solar cell. The 26.82% efficiency (best performance) achieved at band-gap 1.268eV, acceptor concentration 1015(1/cm3), and thickness 1.5µm with buffer Zn1-yS:Cuy at y=0.06 which is 28.55% higher than that of reference cell.
Index Terms—Solar energy, Energy Conversion, Voltage, Current Density, Band Gap, Doping Concentration, CIGS, SCAPS-1D.